Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-06-26
2007-06-26
Berman, Jack I. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492300, C250S492210, C250S492230, C250S397000, C438S016000, C438S514000, C315S111810, C118S663000
Reexamination Certificate
active
10916627
ABSTRACT:
A particle monitor in the process chamber of a semiconductor device manufacturing apparatus provides a measure of a flux of contaminant particles in the chamber. The flux is measured whilst process conditions are produced in the process chamber and a process parameter is adjusted in response to the measured flux in order to reduce this flux during the process. In an ion implanter, the particle sensor measures the flux of particles entrained with the ion beam at a location in front of the wafer being processed.
REFERENCES:
patent: 4896048 (1990-01-01), Borden
patent: 5047648 (1991-09-01), Fishkin et al.
patent: 5146098 (1992-09-01), Stack
patent: 5255089 (1993-10-01), Dybas et al.
patent: 5463460 (1995-10-01), Fishkin et al.
patent: 5565985 (1996-10-01), Fishkin et al.
patent: 5751422 (1998-05-01), Mitchell
patent: 6188475 (2001-02-01), Inman et al.
patent: 6501081 (2002-12-01), Foad et al.
patent: 6909102 (2005-06-01), Buccos
patent: 7078712 (2006-07-01), Perel et al.
patent: 2 307 779 (1997-06-01), None
patent: 2 317 988 (1998-04-01), None
S. Myers et al., “Integration of a Particle Monitor into the Control System for an Ion Implanter” in Nuclear Inst. and Methods in Physics Research B74 (1993), pp. 243-247.
J. Sedgewick et al., “In Situ Particle Monitoring in a Varian E1000HP Ion Implanter” in Ion Implantation Technology-94 (1995), pp. 579-582.
J. Sedgewick et al., “In Situ Particle Monitoring in a Varian Medium Current Implanter” in Ion Implantation Technology-94 (1995), pp. 583-587.
J. Simmons et al., “Advanced In-Situ Particle Monitor for Applied Materials Implanter Applications” in Ion Implantation Technology—98 (1998), pp. 570-573.
J. Simmons et al., “Successful Integration of In-Situ Particle Monitoring into a vol. 300 mm High Current Implant Manufacturing System” in Ion Implantation Technology—02 (2002), pp. 323-326.
P. Sferlazzo et al., “Experimental Evidence for Beam Particulate Transport in Ion Implanters” in Ion Implantation Technology-92 (1993), pp. 565-569.
Patent Abstract of Japan, vol. 008, No. 135 (E-252), Jun. 22, 1984 of JP 59 046749A, Koike Hideki, “Ion Implantation Device.”
S. Leung et al., “Real Time, In Situ Particle Monitoring of the Applied Materials PI9200 Ion Implanter” in Nuclear Instruments and Methods in Physics Research, B55, No. 1/4, Apr. 2, 1991, pp. 35-38.
Applied Materials Inc.
Berman Jack I.
Boult Wade & Tennant
Hashmi Zia R.
LandOfFree
Semiconductor device manufacturing apparatus and a method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device manufacturing apparatus and a method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device manufacturing apparatus and a method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3867845