Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-29
2009-10-27
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29200, C257SE29201, C257SE21545, C257SE21549, C438S248000, C438S259000, C438S270000, C438S391000
Reexamination Certificate
active
07608878
ABSTRACT:
A method for manufacturing a semiconductor device includes forming a device isolation film by a double Shallow Trench Isolation (STI) process, forming a first active region having a negative slope and a second active region having a positive slope. Additionally, the method includes applying a recess region and a bulb-type recess region to the above-extended active region so as to prevent generation of horns in the active regions. This structure results in improvement in effective channel length and area.
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Hynix / Semiconductor Inc.
Pham Thanh V
Townsend and Townsend / and Crew LLP
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