Semiconductor device manufacture method including process of...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate

Reexamination Certificate

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C438S232000, C438S306000, C438S527000, C257SE21434

Reexamination Certificate

active

10298641

ABSTRACT:
A gate electrode made of semiconductor is formed on the partial surface area of a semiconductor substrate. A mask member is formed on the surface of the semiconductor substrate in an area adjacent to the gate electrode. Impurities are implanted into the gate electrode. After impurities are implanted, the mask member is removed. Source and drain regions are formed by implanting impurities into the surface layer of the semiconductor substrate on both sides of the gate electrode. It is possible to reduce variations of cross sectional shape of gate electrodes and set an impurity concentration of the gate electrode independently from an impurity concentration of the source and drain regions.

REFERENCES:
patent: 4735917 (1988-04-01), Flatley et al.
patent: 5552346 (1996-09-01), Huang et al.
patent: 6271125 (2001-08-01), Yoo et al.
patent: 6423602 (2002-07-01), Matsuda
patent: 6582995 (2003-06-01), Hsieh et al.
patent: 6599819 (2003-07-01), Goto
patent: 6734070 (2004-05-01), Takahashi
patent: 6808974 (2004-10-01), Park et al.
patent: 09-186317 (1997-07-01), None
patent: 9-275149 (1997-10-01), None
patent: 2000-150880 (2000-05-01), None
patent: 2001-297996 (2001-10-01), None
Japanese Office Action dated Dec. 26, 2006 (mailing date), issued in corresponding Japanese Patent Application No. 2002-314613.

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