Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2007-10-23
2007-10-23
Wilczewski, M. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S232000, C438S306000, C438S527000, C257SE21434
Reexamination Certificate
active
10298641
ABSTRACT:
A gate electrode made of semiconductor is formed on the partial surface area of a semiconductor substrate. A mask member is formed on the surface of the semiconductor substrate in an area adjacent to the gate electrode. Impurities are implanted into the gate electrode. After impurities are implanted, the mask member is removed. Source and drain regions are formed by implanting impurities into the surface layer of the semiconductor substrate on both sides of the gate electrode. It is possible to reduce variations of cross sectional shape of gate electrodes and set an impurity concentration of the gate electrode independently from an impurity concentration of the source and drain regions.
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Kokura Hikaru
Sambonsugi Yasuhiro
Fujitsu Limited
Pompey Ron
Westerman, Hattori, Daniels & Adrian , LLP.
Wilczewski M.
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