Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-08-29
2006-08-29
Flynn, Nathan J. (Department: 2826)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S787000, C438S769000, C257S296000
Reexamination Certificate
active
07098153
ABSTRACT:
A gate insulating film made of silicon oxynitride is disposed on the partial surface area of a semiconductor substrate. A gate electrode is disposed on the gate insulating film. Source and drain regions are disposed on both sides of the gate electrode. An existence ratio of subject nitrogen atoms to a total number of nitrogen atoms in the gate insulating film is 20% or smaller, wherein three bonds of each subject nitrogen atom are all coupled to silicon atoms and remaining three bonds of each of three silicon atoms connected to the subject nitrogen atom are all coupled to other nitrogen atoms.
REFERENCES:
patent: 5674788 (1997-10-01), Wristers et al.
patent: 6215146 (2001-04-01), Umeda et al.
patent: 6252296 (2001-06-01), Umeda et al.
patent: 6524968 (2003-02-01), Takahashi et al.
patent: 6740605 (2004-05-01), Shiraiwa et al.
patent: 6890869 (2005-05-01), Chung
patent: 2002/0055273 (2002-05-01), Hasegawa
patent: 2002/0072177 (2002-06-01), Grider
patent: 2003/0001218 (2003-01-01), Takagi
patent: 2003/0168706 (2003-09-01), Aoki et al.
patent: 5-102482 (1993-04-01), None
patent: 6-151829 (1994-05-01), None
patent: 11-204787 (1999-07-01), None
patent: 2001-203198 (2001-07-01), None
Chen et al., Downscaling Limit of Equivalent Oxide Thickness in Formation of Ultrathin Gate Dielectric by Thermal-Enhanced Remote Plasma Nitridation, IEEE Transactions on Electron Devices, May 2002, vol. 49, No. 5, p. 840-845.
Hori Mitsuaki
Shigeno Mayumi
Tamura Naoyoshi
Flynn Nathan J.
Fujitsu Limited
Sefer Ahmed N.
Westerman, Hattori, Daniels & Adrian , LLP.
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