Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2007-09-07
2009-08-04
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S154000, C365S063000, C257S348000, C257SE21700, C257S536000
Reexamination Certificate
active
07570509
ABSTRACT:
A semiconductor device comprises: a) a multiple layered substrate including a semiconductor substrate, an insulation film formed on the semiconductor substrate, and a semiconductor film, b) a first inverter having a first n-channel type MISFET and a first p-channel type MISFET connected in series each other, being formed on a first region in the multiple layered substrate; c) a second inverter having a second n-channel type MISFET and a second p-channel type MISFET connected in series each other, being formed on a second region; d) a first wiring connecting the output of the first inverter to the input of the second inverter; e) a second wiring connecting the output of the second inverter to the input of the first inverter; f) a first back gate region formed on the first region in the semiconductor substrate; g) a second back gate region formed on the second region in the semiconductor substrate; (h) a first connecting portion between the first wiring and the second back gate region; and (i) a second connecting portion between the second wiring and the first back gate region.
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Le Toan
Oliff & Berridg,e PLC
Phung Anh
Seiko Epson Corporation
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