Semiconductor device, logic circuit and electronic equipment

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Reexamination Certificate

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Details

C365S154000, C365S063000, C257S348000, C257SE21700, C257S536000

Reexamination Certificate

active

07570509

ABSTRACT:
A semiconductor device comprises: a) a multiple layered substrate including a semiconductor substrate, an insulation film formed on the semiconductor substrate, and a semiconductor film, b) a first inverter having a first n-channel type MISFET and a first p-channel type MISFET connected in series each other, being formed on a first region in the multiple layered substrate; c) a second inverter having a second n-channel type MISFET and a second p-channel type MISFET connected in series each other, being formed on a second region; d) a first wiring connecting the output of the first inverter to the input of the second inverter; e) a second wiring connecting the output of the second inverter to the input of the first inverter; f) a first back gate region formed on the first region in the semiconductor substrate; g) a second back gate region formed on the second region in the semiconductor substrate; (h) a first connecting portion between the first wiring and the second back gate region; and (i) a second connecting portion between the second wiring and the first back gate region.

REFERENCES:
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patent: A-2003-060068 (2003-02-01), None
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patent: A-2005-260607 (2005-09-01), None

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