Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-10
2006-10-10
Potter, Roy (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000
Reexamination Certificate
active
07119004
ABSTRACT:
The variation of the parasitic inductance generated at the output terminal of a transistor in the final stage of a multistage amplifier unit is reduced. One side of the semiconductor chip that includes the final stage transistor is put in contact with the inner wall of a square recess formed in a wiring substrate. The semiconductor chip is positioned and fixed accurately at the bottom of the recess, whereby the drain wire of the transistor is fixed. Then, a chip edge at which the drain electrode is disposed on top of the chip is put in contact with the inner wall of the recess, which is closer to the drain bonding pad. A metallized layer is formed of the same size as that of the chip at the bottom of the recess and a fusion bonding material is supplied on the metallized layer.
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Hashizume Masakazu
Ida Tsutomu
Kikuchi Sakae
Kobayashi Yoshihiko
Shiokawa Yoshinori
Mattingly ,Stanger ,Malur & Brundidge, P.C.
Potter Roy
Renesas Eastern Japan semiconductor, Inc.
Renesas Technology Corp.
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