Semiconductor device interconnected to analog IC driven by high

Details Semiconductor device interconnected to analog IC driven by high Semiconductor device interconnected to analog IC driven by high

1992-07-14

1994-07-05

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257367, 257369, 257371, 257401, 257408, 257409, H01L 2702, H01L 2910, H01L 2978

Patent

active

053270002

ABSTRACT:
In a MOS type LSI comprising an n channel-open-drain-transistor capable of connecting with an analog IC driven by a high voltage, a surge breakdown voltage and a drain breakdown voltage of the open-drain-transistor is increased, and hence the reliability is increased. An n channel-open-drain-transistor includes a ring-shaped gate electrode and a drain region. A drain region is surrounded by a gate electrode. Drain region includes an n.sup.- region and an n.sup.+ region. An n channel MOS transistor includes a gate electrode and a drain region. Drain region includes an n.sup.- region and an n.sup.+ region. An impurity concentration of n.sup.- drain region of the n channel-open-drain-transistor is higher than an impurity concentration of n.sup.- drain region of the n channel MOS transistor.

REFERENCES:
Yamaguchi et al., "Process and Device Design of a 1000-V MOS IC", IEEE Transactions on Electron Devices, vol. ED-29, No. 8 (Aug. 1982), pp. 1171-1178.

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