Semiconductor device incorporating internal voltage down convert

Details Semiconductor device incorporating internal voltage down convert Semiconductor device incorporating internal voltage down convert

1992-01-10

1993-09-28

Fears, Terrell W.

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Read/write circuit

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365226, G11C 1300

Patent

active

052491552

ABSTRACT:
An n channel driver circuit comprised of an N channel MOS transistor is provided in parallel to a driver circuit comprised of a P channel MOS transistor. Normally, n channel driver circuit supplies an internal supply voltage, to activate driver circuit only at the time of current peak. Thus, an insufficient capability of n.sup.- channel driver circuit to supply current is supplemented.

REFERENCES:
"On-Chip Supply Voltage Conversion System and Its Application to a 4Mb DRAM", Extended Abstracts of the 8th (1986 International) Conference on Solid State Devices and Materials, Tokyo, pp. 307-310, Watanabe et al.
"Dual-Operating-Voltage Scheme for a Single 5-V 16-Mbit DRAM", IEEE Journal of Solid State Circuits, vol. 23, No. 5, Oct. 1988, pp. 1128-1132, Masashi Horiguchi.

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