Semiconductor device incorporating a contact and manufacture the

Details Semiconductor device incorporating a contact and manufacture the Semiconductor device incorporating a contact and manufacture the

1996-05-31

1998-11-17

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257641, 257752, 257763, H01L 2976

Patent

active

058380493

ABSTRACT:
A semiconductor device comprising a silicon substrate, an oxide layer on the silicon substrate, a doped polysilicon region disposed on the oxide layer, a dielectric layer which has been deposited over the doped polysilicon region and the silicon substrate, a contact hole which is formed in the dielectric layer and extends over respective laterally adjacent portions of the doped polysilicon region and the silicon substrate and a contact which has been selectively deposited in the contact hole which electrically connects the said portions together. The invention also provides a method of fabricating a semiconductor device incorporating a refractory metal contact, the method comprising the steps of: a) providing a semiconductor substrate having an oxide layer thereon and a doped polysilicon region disposed on the oxide layer; (b) depositing a dielectric layer over the doped polysilicon region and over the silicon substrate; (c) forming a contact hole in the dielectric layer which exposes a portion of the doped polysilicon region and a laterally adjacent portion of the silicon substrate; and (d) selectively depositing a contact into the contact hole thereby electrically to connect together the doped polysilicon region and the silicon substrate.

REFERENCES:
patent: 4042953 (1977-08-01), Hall
patent: 4859630 (1989-08-01), Josquin
patent: 4912540 (1990-03-01), Sander et al.
patent: 5099308 (1992-03-01), Murayama
patent: 5148247 (1992-09-01), Miura
patent: 5210429 (1993-05-01), Adan
patent: 5234850 (1993-08-01), Liao
patent: 5245210 (1993-09-01), Nishigoori
patent: 5541434 (1996-07-01), Nicholls et al.

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