Semiconductor device including very low sheet resistivity buried

Details Semiconductor device including very low sheet resistivity buried Semiconductor device including very low sheet resistivity buried

1992-09-11

1994-02-01

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257341, 257343, 257382, 257401, 257587, 257596, 257611, H01L 2910

Patent

active

052834549

ABSTRACT:
A metal or silicide buried layer in MOS semiconductor devices provides a drain contact on the upper surface of the device with a greatly reduced resistance. The methods of manufacture include depositing the buried layer, rather than diffusing, so that interference with other components is greatly reduced and spacing between components is reduced to reduce the over-all size of the device.

REFERENCES:
patent: 4890142 (1989-12-01), Tonnel et al.
patent: 4972239 (1990-11-01), Mihara

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