Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-27
2006-06-27
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257S329000
Reexamination Certificate
active
07067874
ABSTRACT:
A semiconductor device that includes an insulating substrate, a plurality of semiconductor layers arranged to be isolated from one another on the insulating substrate, and a semiconductor element independently provided on the semiconductor layers. Further, a trench may extend from the main surface to the substrate and have an inner wall covered with an insulating film. At least one of an edge on the side of the substrate and an edge on the side opposite thereof of the semiconductor layer has a rounded surface. Further, an angle between a line tangent to a surface having a smallest radius of curvature of the rounded surface of the edge and the main surface ranges from 30° to 60° at a section of the edge.
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Minato Tadaharu
Nakamura Katsumi
Shiozawa Katsuomi
Tominaga Shuuichi
Lee Eugene
Mitsubishi Denki & Kabushiki Kaisha
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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