Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-12-30
1996-10-01
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257302, 257296, 257329, 257 66, 257 68, 257 57, 257906, H01L 2978, H01L 29786
Patent
active
055613080
ABSTRACT:
A semiconductor device comprises a semiconductor substrate of a first conductivity type, a first insulation film formed on the semiconductor substrate, a gate electrode and a second insulation film formed in sequence on the first insulation film, a trench being formed to extend through the second insulation film, the gate electrode and the first insulation film to an interior of the semiconductor substrate. A cylindrical gate insulation film is formed on a surface of the gate electrode which is exposed in the trench. A capacitor insulation film is formed on a surface of the semiconductor substrate exposed in the trench. A cylindrical conductive film is formed inside these insulation films. The cylindrical conductive film includes a region doped with an impurity of the first conductivity type and formed on a surface of the gate insulation film, a region doped with an impurity of a second conductivity type and formed on a surface of the second insulation film and a region doped with an impurity of the second conductivity type and formed on a surface of the capacitor insulation film. A conductive column is formed in a region surrounded by the cylindrical conductive film.
REFERENCES:
patent: 4673962 (1987-06-01), Chatterjee et al.
patent: 4829017 (1989-05-01), Malhi
patent: 5164917 (1992-11-01), Shichijo
patent: 5214296 (1993-05-01), Nakata et al.
patent: 5365097 (1994-11-01), Kenney
patent: 5382816 (1995-01-01), Mitsui
Kamata Hideyuki
Kumagai Jumpei
Hardy David B.
Kabushiki Kaisha Toshiba
Limanek Robert P.
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