Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-20
2007-02-20
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S309000
Reexamination Certificate
active
10830895
ABSTRACT:
A semiconductor device including storage nodes and a method of manufacturing the same: The method includes forming an insulating layer and an etch stop layer on a semiconductor substrate; forming storage node contact bodies to be electrically connected to the semiconductor substrate by penetrating the insulating layer and the etch stop layer; forming landing pads on the etch stop layer to be electrically connected to the storage node contact bodies, respectively; and forming storage nodes on the landing pads, respectively, the storage nodes of which outward sidewalls are completely exposed and which are arranged at an angle to each other.
REFERENCES:
patent: 6381165 (2002-04-01), Lee et al.
patent: 6396096 (2002-05-01), Park et al.
patent: 2001/0029113 (2001-10-01), Kunitomo et al.
patent: 2002/0084480 (2002-07-01), Basceri et al.
patent: 2004/0108536 (2004-06-01), Lee et al.
patent: 2336716 (1999-10-01), None
patent: 1999-0081113 (1999-11-01), None
English language abstract of Korean Publication No. 1999-0081113.
Cho Chang-Hyun
Chung Tae-Young
Lee Jae-Goo
Lee Ju-Yong
Yun Cheol-Ju
Marger & Johnson & McCollom, P.C.
Smoot Stephen W.
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