Semiconductor device including semiconductor thin films...

Details Semiconductor device including semiconductor thin films... Semiconductor device including semiconductor thin films...

2006-08-08

2006-08-08

Flynn, Nathan J. (Department: 2826)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S166000, C438S486000, C257S066000, C257S049000, C257SE29277, C257SE29137

Reexamination Certificate

active

07087505

ABSTRACT:
A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.

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