Semiconductor device including resistance storage element

Details Semiconductor device including resistance storage element Semiconductor device including resistance storage element

2011-02-01

2011-02-01

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000

Reexamination Certificate

active

07881102

ABSTRACT:
A phase change memory includes a memory cell with a phase change element storing data according to level change of a resistance value in association with phase change, a write circuit converting the phase change element to an amorphous state or a polycrystalline state according to the logic of write data in a write operation mode, a read circuit reading out stored data from the phase change element in a readout operation mode, and a discharge circuit applying a discharge voltage to the phase change element to remove electrons trapped in the phase change element in a discharge operation mode. Accordingly, variation in the resistance value at the phase change element can be suppressed.

REFERENCES:
patent: 6856552 (2005-02-01), Takahashi
patent: 2002/0028547 (2002-03-01), Ryu et al.
patent: 2009/0027954 (2009-01-01), Kang et al.
patent: 2009/0073753 (2009-03-01), Osada et al.
patent: 2001-345390 (2001-12-01), None
patent: 2003-173690 (2003-06-01), None
Gill et al., “Ovonic Unified Memory—A High-Performance Nonvolatile Memory Technology for Stand-Alone Memory and Embedded Applications,” 2002 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, pp. 202-203.

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