Semiconductor device including quaternary buffer layer with pinh

Details Semiconductor device including quaternary buffer layer with pinh Semiconductor device including quaternary buffer layer with pinh

1997-05-30

1999-06-01

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

257 13, 257 96, 257 97, 257103, 372 44, 372 50, H01L 3300, H01L 310304

Patent

active

059090405

ABSTRACT:
A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) layers laminated above the nucleus formation buffer layer. The nucleus formation buffer layer is formed of Al.sub.1-s-t Ga.sub.s In.sub.t N (0.ltoreq.s.ltoreq.1, 0.ltoreq.t.ltoreq.1, s+t.ltoreq.1) and formed on a surface of the substrate with an average film thickness of 5 nm to 20 nm such that the nucleus formation buffer layer has a number of pinholes for control of polarity and formation of nuclei. The pinholes are formed among loosely formed small crystals of Al.sub.1-s-t Ga.sub.s In.sub.t N (0.ltoreq.s.ltoreq.1, 0.ltoreq.t.ltoreq.1, s+t.ltoreq.1).

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Kamp et al Mat. Res. Soc. Symp. Proceed. vol. 395 "GaN in Materials" "NH.sub.3 in GaN" pp. 135-139, Dec. 1995.
Van der Stricht et al Mat. Res. Soc. Symp. proceed. vol. 395 "GaN in Materials" "The Effect of a GaN . . . Deposition" pp. 231-236, Dec. 1995.

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