Semiconductor device including quantum wells or quantum wires an

Details Semiconductor device including quantum wells or quantum wires an Semiconductor device including quantum wells or quantum wires an

1997-07-17

1999-03-16

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438962, 257 9, 257 12, 372 45, H01L 2906

Patent

active

058829520

ABSTRACT:
A method of fabricating a semiconductor device includes: forming multiatomic steps by MOCVD on a (110) semiconductor substrate inclined at least one double heterostructure including a first compound semiconductor and a second compound semiconductor having a smaller band gap than the first compound semiconductor to form quantum wires of the second compound semiconductor at edges of the multiatomic steps. Multiatomic steps having step edges along the longitudinal direction of the wire have improved linearity, and thus, quantum wires can be fabricated with improved controllability.

REFERENCES:
K. Inoue, et al. "Composition Modulation in Quantum Wire Structures on Vicinal (110) GaAs Studied by Photoluminescence." Japanese Journal of Applied Physics vol. 34 (Feb. 1995) Part 1, No. 2B, pp. 1342-1344.
S. Hara, et al. "Quantum Well Wire Fabrication Method Using Self-Organized Multiatomic Steps on Vicinal (001) GaAs Surfaces by Metalorganic Vapor Phase Epitaxy." Japanese Journal of Applied Physics vol. 34, (Aug. 1995) Part 1, No. 8B, pp. 4401-4404.
S. Hara et al., "Formation and photoluminescence characterization of quantum well wires using multiatomic steps grown by metalorganic vapor phase epitaxy", J. Crystal Growth 145, pp. 692-697 (no month given), 1994.
K. Inoue et al., "Composition modulation in quantum wire structures on vicinal (110) GaAs studied by photoluminescence", J. J. Appl. Phys. 34, pp. 1342-1344, Feb. 1995.
S. Hara et al., "Quantum well wire fabrication method using self-organized mutiatomic steps on vicinal (001) GaAs surfaces by metalorganic vapor phase epitaxy", J. J. Appl. Phys. 34, pp. 4401-4404, Aug. 1995.

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