1988-08-19
1989-06-27
Carroll, J.
357 2, 357237, 357 68, H01L 2712, H01L 2978, H01L 2348
Patent
active
048434388
ABSTRACT:
A thin film transistor which includes an insulative substrate, and a gate electrode, a gate isulating film, a semi-conductor film, a source electrode, and a drain electrode, which are all laminated in that order onto the insulating substrate in the form of an array. The gate electrode is made of tantalum, and the gate insulating film is formed into a double-layered construction of an anodized tantalum film and a silicon nitride film, while the semi-conductor film is provided at each intersection between the gate electrode and the source electrode.
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Koden Mitsuhiro
Tanaka Hirohisa
Yano Kohzo
Carroll J.
Sharp Kabushiki Kaisha
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