Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate
2006-11-21
2006-11-21
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
In integrated circuit
C257S206000, C257SE27110
Reexamination Certificate
active
07138698
ABSTRACT:
A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has a current path to one end of which an input voltage is supplied, and the other end of the current path is connected to an inductance. The driver circuit is formed on the first semiconductor substrate, on which the high side switching element is formed, and drives the high side switching element. The low side switching element is formed on a second semiconductor substrate separate from the first semiconductor substrate, and has a drain connected to the inductance and a source supplied with a reference potential.
REFERENCES:
patent: 6278264 (2001-08-01), Burstein et al.
patent: 2004/0159891 (2004-08-01), Nakamura et al.
MAX1710 evaluations kit, “Products Catalogue: Maxim Integrated Products”, Maxim Japan K.K., 1998, pp. 1-10.
Matsudai Tomoko
Matsushita Ken'ichi
Nakagawa Akio
Nakamura Kazutoshi
Yasuhara Norio
Kabushiki Kaisha Toshiba
Liu Benjamin Tzu-Hung
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tran Minhloan
LandOfFree
Semiconductor device including power MOS field-effect... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device including power MOS field-effect..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including power MOS field-effect... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3638884