Semiconductor device including polysilicon semiconductor element

Details Semiconductor device including polysilicon semiconductor element Semiconductor device including polysilicon semiconductor element

1994-05-23

1995-08-22

Ngo, V. Ngo

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 66, 257412, 257607, 257655, H01L 2701, H01L 2700, H01L 2978

Patent

active

054442842

ABSTRACT:
A semiconductor device has a semiconductor element comprising polycrystal silicon and into which high-concentration donors and high-concentration acceptors have been introduced in substantially the same amounts, and enables control of a work function of a semiconductor element by adjustment of the concentrations of the donor and acceptor. This semiconductor device is manufactured by the formation of a heat oxide film on a semiconductor substrate, the use of a low-pressure CVD method to form a polysilicon thin film to a required thickness, the implantation in the same high-concentrations of the donor and acceptor into the polysilicon thin film, and heat processing in a required atmosphere, for a required time and at a required temperature to diffuse and activate the injected donor and acceptor.

REFERENCES:
patent: 5367190 (1994-11-01), Funaki
S. T. Hsu, "The Limitation of Short Channel-Length N, -Polysilicon-Gate CMOS ICs", RCA Review, vol. 46, Jun. 1985, pp. 153-162.

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