Semiconductor device including overvoltage protection diode

Details Semiconductor device including overvoltage protection diode Semiconductor device including overvoltage protection diode

1989-09-14

1997-01-21

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257488, H01L 29866

Patent

active

055962173

ABSTRACT:
A semiconductor device includes a diode element for protecting a transistor against an overvoltage. A first region of p-type conductivity is formed on an upper surface of an n-type semiconductor substrate in which base and emitter regions of the transistor are formed. A second region of n.sup.+ -type conductivity whose impurity concentration is higher than that of the n-type semiconductor substrate is formed on its upper surface to be spaced apart from the first region. An insulating film is formed to cover the upper surface of the semiconductor substrate. Furthermore, a conductive film is formed to partially overlap the first and second regions through the insulating film. The first region serves as an anode, the second region serves as a cathode, and the conductive film serves as a gate electrode; thus an overvoltage protection diode is obtained.

REFERENCES:
patent: 3648340 (1972-03-01), MacIver

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