Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound
Reexamination Certificate
2011-08-02
2011-08-02
Sandvik, Benjamin P (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Group iii-v compound
C257SE21097, C257SE21119, C257SE21127, C257SE21054, C257SE21514, C257SE29104, C257SE31023, C257SE31046, C257SE33035, C438S933000
Reexamination Certificate
active
07989926
ABSTRACT:
A semiconductor device includes a substrate formed of a single crystal. a silicon carbide layer disposed on a surface of the single crystal substrate and an intermediate layer disposed on a surface of the silicon carbide layer and formed of a Group III nitride semiconductor, wherein the silicon carbide layer is formed of a cubic crystal stoichiometrically containing silicon copiously and the surface thereof has a (3×3) reconstruction structure. The semiconductor device is fabricated by a method including a first step of blowing a hydrocarbon gas on the surface of the substrate, thereby inducing adsorption of hydrocarbon thereon, a second step of heating the substrate having adsorbed the hydrocarbon to a temperature exceeding a temperature used for the adsorption of the hydrocarbon while irradiating the surface of the substrate with electrons and consequently giving rise to a silicon carbide layer formed of a cubic crystal stoichiometrically containing silicon copiously and provided with a surface having a (3×3) reconstruction structure and a third step of supplying a gaseous raw material containing nitrogen and a gaseous raw material containing a Group III element to the surface of the silicon carbide layer and consequently giving rise to the intermediate layer formed of the Group III nitride semiconductor.
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Khan Farid
Sandvik Benjamin P
Showa Denko K.K.
Sughrue & Mion, PLLC
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