Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-12-01
1999-09-07
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257617, 257647, 257655, 257913, H01L 2930, H01L 2358, H01L 29167, H01L 29207
Patent
active
059491159
ABSTRACT:
In a MOS semiconductor device utilizing a crystalline silicon substrate, the formation of a parasitic channel is suppressed. A solution of nickel acetate is applied to a silicon substrate 101 to form a layer including nickel indicated by 102. Thermal oxidation is performed to form a field oxide film 103 for device separation. At this time, a halogen element is included in the atmosphere. At this step, the action of nickel suppresses the formation of defects at the interface between the oxide film 103 and a channel region 106 and in the vicinity thereof, thereby suppressing the formation of a parasitic channel. Further, as a result of the action of the halogen element, nickel is gettered into the thermal oxidation film 103.
REFERENCES:
patent: 4177084 (1979-12-01), Law et al.
patent: 4751193 (1988-06-01), Myrick
patent: 5578865 (1996-11-01), Vu et al.
patent: 5643826 (1997-07-01), Ohtani et al.
Fumio Shimura, "Semiconductor Silicon Crystal Engineering", K.K. Maruzen, pp. 217-240, Sep. 30, 1993.
Koyama Jun
Teramoto Satoshi
Yamazaki Shunpei
Ngo Ngan V.
Semiconductor Energy Laboratory Co,. Ltd.
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