Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Reexamination Certificate
2006-09-19
2006-09-19
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
C257S255000
Reexamination Certificate
active
07109568
ABSTRACT:
In a semiconductor device including n-channel field-effect transistors and p-channel field-effect transistors, in which the channel direction is parallel to a axis, a semiconductor device in provided which has excellent drain current characteristics at both n-channel field-effect transistors and p-channel field-effect transistors. In a semiconductor device including n-channel field-effect transistors N1and N2and p-channel field-effect transistors P1and P2, a stress control film that covers the gate electrodes of the n-channel and p-channel field-effect transistors from upper surfaces thereof is not formed, or is made thin, above shallow trench isolations adjacent to active regions formed by the p-channel field-effect transistors P1and P2, in a case where the stress control film is a tensile film stress. Thus, improvement of the drain currents of both the n-channel and p-channel transistors can be expected. For this reason, it is possible to improve overall characteristics.
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Kumagai Yukihiro
Nasu Shingo
Ohta Hiroyuki
Antonelli, Terry Stout and Kraus, LLP.
Hitachi , Ltd.
Vu Hung
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