Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-08-08
2006-08-08
Smith, Bradley K. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE21008
Reexamination Certificate
active
07087977
ABSTRACT:
Plural elements forming a high frequency device in one chip are provided by forming a resistor element and the lower electrode of a capacitor element from one identical polycrystal silicon film over a substrate; forming the gate electrode of a power MISFET, upper electrode of the capacitor element, gate electrode of an n-channel type MISFET and gate electrode of a p-channel type MISFET from an identical polycrystal silicon film different from the other polycrystal silicon film and a WSi film; forming a capacitor element having a wiring formed on a silicon oxide film deposited over the substrate as a lower electrode and a wiring formed on the silicon oxide film as the upper electrode in the region MIN; forming a spiral coil in a region IND using an aluminum alloy film identical with that deposited on a silicon oxide film; and forming a bonding pad in a region PAD.
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Hoshino Yutaka
Morikawa Masatoshi
Nakayama Fumitaka
Uchiyama Tetsuo
Antonelli, Terry Stout and Kraus, LLP.
Renesas Eastern Japan Semiconductor Inc.
Renesas Technology Corp.
Smith Bradley K.
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