Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-08
2005-02-08
Brewster, William M. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S351000, C257S392000
Reexamination Certificate
active
06853030
ABSTRACT:
A semiconductor device and a manufacturing method thereof permitting the quality of gate insulating films to be prevented from deteriorating and thereby permitting electrical characteristics of the device to be prevented from deteriorating are provided. In a semiconductor device including a plurality of field effect transistors, an oxidation protection film21is formed on a side of one gate electrode19.
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Stanley Wolf, Ph.D., “Silicon Processing for the VLSI Era vol. 3: The Subicron MOSFET,” Latice Press, 1995, pp. 646-661.
Higashitani Keiichi
Igarashi Motoshige
Okada Katsuya
Yamada Keiichi
Yoshiyama Kenji
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