Semiconductor device including multiple field effect...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S351000, C257S392000

Reexamination Certificate

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06853030

ABSTRACT:
A semiconductor device and a manufacturing method thereof permitting the quality of gate insulating films to be prevented from deteriorating and thereby permitting electrical characteristics of the device to be prevented from deteriorating are provided. In a semiconductor device including a plurality of field effect transistors, an oxidation protection film21is formed on a side of one gate electrode19.

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patent: 5-267595 (1993-10-01), None
Stanley Wolf, Ph.D., “Silicon Processing for the VLSI Era vol. 3: The Subicron MOSFET,” Latice Press, 1995, pp. 646-661.

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