Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2006-10-06
2009-11-24
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S163000, C365S189070
Reexamination Certificate
active
07623401
ABSTRACT:
One embodiment provides a semiconductor device including a plurality of multi-bit memory cells, a first temperature budget sensor, and a circuit. Each of the plurality of multi-bit memory cells is programmable into each of more than two states. The circuit compares a first signal from the first temperature budget sensor to a first reference signal to obtain a first comparison result. The circuit refreshes the plurality of multi-bit memory cells based on the first comparison result.
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Happ Thomas
Philipp Jan Boris
Dicke, Billig & Czaja P.L.L.C.
Dinh Son
Qimonda North America Corp.
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