Semiconductor device including MOS capacitance

Details Semiconductor device including MOS capacitance Semiconductor device including MOS capacitance

1997-02-05

1998-06-30

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257532, 257369, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

057738602

ABSTRACT:
An improved semiconductor device including an MOS capacitance is provided, having enhanced MOS capacitance accuracy. A well of a first conductivity type is formed at the main surface of a semiconductor substrate. The above-described well is removed immediately under a capacitance dope layer.

REFERENCES:
patent: 5416354 (1995-05-01), Blackstone
patent: 5548150 (1996-08-01), Omura et al.
patent: 5576570 (1996-11-01), Ohsawa et al.

Affiliated with

Also associated with

Rating

Semiconductor device including MOS capacitance does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including MOS capacitance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including MOS capacitance will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1862759