Semiconductor device including metal interconnection and...

Details Semiconductor device including metal interconnection and... Semiconductor device including metal interconnection and...

2006-10-10

2009-12-22

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S629000, C438S633000, C257SE21576, C257SE21577

Reexamination Certificate

active

07635644

ABSTRACT:
Disclosed are a method for forming a metal interconnection and a semiconductor device including the metal interconnection. The method includes the steps of forming a slope by etching a corner of a contact hole, which exposes a predetermined pattern formed on a substrate, forming a barrier metal layer on an interlayer dielectric layer, plasma-treating the barrier metal layer with hydrogen and nitrogen gases for about 27 to 37 seconds, heat-treating the substrate in a nitrogen atmosphere, forming a tungsten layer on the barrier metal layer through a two-step nucleation process and bulk deposition process, and performing a chemical mechanical polishing process on the tungsten layer until the interlayer dielectric layer is exposed. The method and the semiconductor device prevent defects of the metal interconnection, such as a volcano defect caused by fluorine penetration.

REFERENCES:
patent: 6096651 (2000-08-01), Wang et al.
patent: 6150259 (2000-11-01), Wu et al.
patent: 6358844 (2002-03-01), Wang et al.
patent: 6429126 (2002-08-01), Herner et al.
patent: 2003/0001265 (2003-01-01), Fortin
patent: 2004/0209461 (2004-10-01), Han

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