Semiconductor device including memory cells and...

Details Semiconductor device including memory cells and... Semiconductor device including memory cells and...

2005-03-29

2005-03-29

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S383000, C257S384000, C438S300000, C438S630000, C438S648000, C438S649000

Reexamination Certificate

active

06873019

ABSTRACT:
In a semiconductor device having memory cells and peripheral circuits, the memory cells and the peripheral circuits are formed on a semiconductor substrate. Source regions, drain regions and gate electrodes of MOS transistors in the peripheral circuits are comprised of a refractory metallic silicide layer. Gate electrodes of MOS transistors in the memory cells are comprised of the refractory metallic silicide. Source and drain regions of the MOS transistors in the memory cells are not comprised of the refractory metallic silicide layer.

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