Semiconductor device including light shieled structures

Details Semiconductor device including light shieled structures Semiconductor device including light shieled structures

2006-10-24

2006-10-24

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S435000

Reexamination Certificate

active

07126175

ABSTRACT:
A semiconductor device comprising: a first light shielded region including a first semiconductor element, the first light shielded region being defined by a first light shielding wall provided in the periphery thereof; a second light shielded region including a second semiconductor element, the second light shielded region being defined by a second light shielding wall provided in the periphery thereof and being provided in a position adjacent to the first light shielded region; a first opening provided in the first light shielding wall; a second opening provided in the second light shielding wall and positioned facing to the first opening; a first wiring layer coupled with the first semiconductor element and brought out to the outside of the first light shielded region from the first opening; a second wiring layer coupled with the second semiconductor element and brought out to the outside of the second light shielded region from the second opening; and a light shielding film provided at least above a region sandwiched between the first light shielded region and the second light shielded region.

REFERENCES:
patent: 2005/0205901 (2005-09-01), Suzuki
patent: 2006/0060899 (2006-03-01), Hong et al.
patent: 2003-124363 (2003-04-01), None

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