Semiconductor device including lateral MOS element

Details Semiconductor device including lateral MOS element Semiconductor device including lateral MOS element

1999-03-25

2000-06-06

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257343, H01L 2976, H01L 31113

Patent

active

060722150

ABSTRACT:
Disclosed is a semiconductor device including a lateral MOS element which comprises a p-type silicon substrate; a first semiconductor layer of an n-type constituting a drift region; a second semiconductor layer of the p-type selectively provided in the first semiconductor layer, and constituting a body region, in which a channel region is partially formed; a third semiconductor layer of the n-type selectively provided in a surface of the second semiconductor layer, and constituting a source region; a fourth semiconductor layer of the n-type provided in the first semiconductor layer, and constituting a drain region; and a trench gate. The trench gate is constructed such that a trench formed in the first semiconductor layer is filled with a gate electrode with an insulating film interposed therebetween. The trench gate is formed such that at least a bottom thereof is in contact with the semiconductor substrate. The semiconductor device of the present invention prevents a high electric field at a corner of the bottom of the trench gate, thus achieving its high breakdown voltage.

REFERENCES:
patent: 5124764 (1992-06-01), Mori
patent: 5627393 (1997-05-01), Hsu
patent: 5708286 (1998-01-01), Uesugi et al.
patent: 5723891 (1998-03-01), Malhi

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