Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-06-12
2007-06-12
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23119, C257SE23144, C257S760000, C257S761000, C257S762000, C257S774000, C257S751000, C257S754000
Reexamination Certificate
active
10760554
ABSTRACT:
The present invention reduces the effective dielectric constant of the interlayer insulating film while inhibiting the decrease of the reliability of the semiconductor device, which otherwise is caused by a moisture absorption. A copper interconnect comprising a Cu film209is formed in multilayer films comprising a L-Ox™ film203and a SiO2film204. Since the L-Ox™ film203comprises ladder-shaped siloxane hydride structure, the film thickness and the film characteristics are stable, and thus changes in the film quality is scarcely occurred during the manufacturing process.
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Ishigami Takashi
Kurokawa Tetsuya
Oda Noriaki
Usami Tatsuya
Foley & Lardner LLP
NEC Electronics Corporation
Williams Alexander Oscar
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