Semiconductor device including internal voltage generation...

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Reexamination Certificate

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C365S053000, C365S185180

Reexamination Certificate

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08004923

ABSTRACT:
A semiconductor integrated circuit device has a negative voltage generation circuit provided at each power supply circuit unit for six memory macros. Therefore, the response with respect to variation in a negative voltage is increased. In a standby mode, a negative voltage supply line for the six memory macros is connected by a switch circuit, and only a negative voltage generation circuit of one power supply circuit unit among six negative voltage generation circuits of the six power supply circuit units is rendered active. Thus, increase in standby current can be prevented.

REFERENCES:
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patent: 6313695 (2001-11-01), Ooishi et al.
patent: 6414881 (2002-07-01), Fujii et al.
patent: 6515903 (2003-02-01), Le et al.
patent: 7292091 (2007-11-01), Welland et al.
patent: 2004/0239408 (2004-12-01), Chen et al.
patent: 2006/0087347 (2006-04-01), Sumi
patent: 2007/0205824 (2007-09-01), Perisetty

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