Semiconductor device including insulating layer

Details Semiconductor device including insulating layer Semiconductor device including insulating layer

2007-02-20

2007-02-20

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S325000, C257S326000, C257S333000, C257S389000, C257S395000, C257S632000, C257S636000, C257S641000, C257S644000, C257S650000

Reexamination Certificate

active

10673937

ABSTRACT:
A method of manufacturing an insulating layer that ensures reproducibility across like manufacturing apparatus. The insulating layer is formed on the substrate by (a) flowing an oxidizing gas at an oxidizing gas flow rate, (b) flowing a first carrier gas at a first carrier gas flow rate while carrying a first impurity including boron flowing at a first impurity flow rate, (c) flowing a second carrier gas at a second carrier gas flow rate while carrying a second impurity including phosphorus flowing at a second impurity flow rate, and (d) flowing a silicon source material at a silicon source flow rate. The second carrier gas flow rate is greater than the first carrier gas flow rate.

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