Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-09
2008-11-25
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29345
Reexamination Certificate
active
07456464
ABSTRACT:
It is an object to obtain a semiconductor device having such a structure that respective electrical characteristics of an insulated gate type transistor and an insulated gate type capacitance are not deteriorated and a method of manufacturing the semiconductor device. An NMOS transistor Q1and a PMOS transistor Q2which are formed in an NMOS formation region A1and a PMOS formation region A2respectively have P−pocket regions17and N−pocket regions27in vicinal regions of extension portions14eand24eof N+source-drain regions14and P+source-drain regions24, respectively. On the other hand, an N-type variable capacitance C1and a P-type variable capacitance C2which are formed in an N-type variable capacitance formation region A3and a P-type variable capacitance formation region A4respectively do not have a region of a reverse conductivity type which is adjacent to extraction electrode regions corresponding to the P−pocket regions17and the N−pocket regions27.
REFERENCES:
patent: 4597824 (1986-07-01), Shinada et al.
patent: 4651406 (1987-03-01), Shimizu et al.
patent: 4701423 (1987-10-01), Szluk
patent: 4743953 (1988-05-01), Toyokura et al.
patent: 4980799 (1990-12-01), Tobita
patent: 5171700 (1992-12-01), Zamanian
patent: 5360989 (1994-11-01), Endo
patent: 5405790 (1995-04-01), Rahim et al.
patent: 5534449 (1996-07-01), Dennison et al.
patent: 5541125 (1996-07-01), Williams et al.
patent: 5608258 (1997-03-01), Rajkanan et al.
patent: 5736435 (1998-04-01), Venkatesan et al.
patent: 5793074 (1998-08-01), Choi et al.
patent: 5926064 (1999-07-01), Hariton
patent: 6060755 (2000-05-01), Ma et al.
patent: 6217357 (2001-04-01), Masuoka
patent: 6228696 (2001-05-01), Nguyen et al.
patent: 6285072 (2001-09-01), Maeda
patent: 6358815 (2002-03-01), Maeda
patent: 7176515 (2007-02-01), Maeda et al.
patent: 2001/0012672 (2001-08-01), Dennison et al.
patent: 2002/0074589 (2002-06-01), Benaissa et al.
patent: 2002/0117705 (2002-08-01), Lee et al.
patent: 2006/0267105 (2006-11-01), Maeda et al.
patent: 4-37070 (1992-02-01), None
patent: 10-303318 (1998-11-01), None
patent: 2000-68388 (2000-03-01), None
patent: 2000-307112 (2000-11-01), None
U.S. Appl. No. 11/621,177, filed Jan. 9, 2007, Maeda, et al.
Streetman, “Solid State Electronic Devices,” 1990, Prentice-Hall, 3rd ed., p. 325-327.
Maeda Shigenobu
Oka Toshihide
Takashino Hiroyuki
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Pert Evan
Quinto Kevin
Renesas Technology Corp.
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