Semiconductor device including insulated gate type...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE29345

Reexamination Certificate

active

07456464

ABSTRACT:
It is an object to obtain a semiconductor device having such a structure that respective electrical characteristics of an insulated gate type transistor and an insulated gate type capacitance are not deteriorated and a method of manufacturing the semiconductor device. An NMOS transistor Q1and a PMOS transistor Q2which are formed in an NMOS formation region A1and a PMOS formation region A2respectively have P−pocket regions17and N−pocket regions27in vicinal regions of extension portions14eand24eof N+source-drain regions14and P+source-drain regions24, respectively. On the other hand, an N-type variable capacitance C1and a P-type variable capacitance C2which are formed in an N-type variable capacitance formation region A3and a P-type variable capacitance formation region A4respectively do not have a region of a reverse conductivity type which is adjacent to extraction electrode regions corresponding to the P−pocket regions17and the N−pocket regions27.

REFERENCES:
patent: 4597824 (1986-07-01), Shinada et al.
patent: 4651406 (1987-03-01), Shimizu et al.
patent: 4701423 (1987-10-01), Szluk
patent: 4743953 (1988-05-01), Toyokura et al.
patent: 4980799 (1990-12-01), Tobita
patent: 5171700 (1992-12-01), Zamanian
patent: 5360989 (1994-11-01), Endo
patent: 5405790 (1995-04-01), Rahim et al.
patent: 5534449 (1996-07-01), Dennison et al.
patent: 5541125 (1996-07-01), Williams et al.
patent: 5608258 (1997-03-01), Rajkanan et al.
patent: 5736435 (1998-04-01), Venkatesan et al.
patent: 5793074 (1998-08-01), Choi et al.
patent: 5926064 (1999-07-01), Hariton
patent: 6060755 (2000-05-01), Ma et al.
patent: 6217357 (2001-04-01), Masuoka
patent: 6228696 (2001-05-01), Nguyen et al.
patent: 6285072 (2001-09-01), Maeda
patent: 6358815 (2002-03-01), Maeda
patent: 7176515 (2007-02-01), Maeda et al.
patent: 2001/0012672 (2001-08-01), Dennison et al.
patent: 2002/0074589 (2002-06-01), Benaissa et al.
patent: 2002/0117705 (2002-08-01), Lee et al.
patent: 2006/0267105 (2006-11-01), Maeda et al.
patent: 4-37070 (1992-02-01), None
patent: 10-303318 (1998-11-01), None
patent: 2000-68388 (2000-03-01), None
patent: 2000-307112 (2000-11-01), None
U.S. Appl. No. 11/621,177, filed Jan. 9, 2007, Maeda, et al.
Streetman, “Solid State Electronic Devices,” 1990, Prentice-Hall, 3rd ed., p. 325-327.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device including insulated gate type... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including insulated gate type..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including insulated gate type... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4028417

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.