Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-02
2007-01-02
Flynn, Nathan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S213000, C257S288000, C257S296000, C257SE29345
Reexamination Certificate
active
10200523
ABSTRACT:
It is an object to obtain a semiconductor device having such a structure that respective electrical characteristics of an insulated gate type transistor and an insulated gate type capacitance are not deteriorated and a method of manufacturing the semiconductor device. An NMOS transistor Q1and a PMOS transistor Q2which are formed in an NMOS formation region A1and a PMOS formation region A2respectively have P31pocket regions17and N31pocket regions27in vicinal regions of extension portions14eand24eof N+source-drain regions14and P+source-drain regions24, respectively. On the other hand, an N-type variable capacitance C1and a P-type variable capacitance C2which are formed in an N-type variable capacitance formation region A3and a P-type variable capacitance formation region A4respectively do not have a region of a reverse conductivity type which is adjacent to extraction electrode regions corresponding to the P31pocket regions17and the N31pocket regions27.
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U.S. Appl. No. 09/832,889, filed Apr. 12, 2001.
Maeda Shigenobu
Oka Toshihide
Takashiho Hiroyuki
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