Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-12-15
2011-12-20
Louie, Wai Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257SE29255, C257S375000, C257S368000, C257S389000, C257S390000, C257S401000
Reexamination Certificate
active
08080853
ABSTRACT:
A semiconductor device includes a vertical IGBT and a vertical free-wheeling diode in a semiconductor substrate. A plurality of base regions is disposed at a first-surface side portion of the semiconductor substrate, and a plurality of collector regions and a plurality of cathode regions are alternately disposed in a second-surface side portion of the semiconductor substrate. The base regions include a plurality of regions where channels are provided when the vertical IGBT is in an operating state. The first-side portion of the semiconductor substrate include a plurality of IGBT regions each located between adjacent two of the channels, including one of the base regions electrically coupled with an emitter electrode, and being opposed to one of the cathode regions. The IGBT regions include a plurality of narrow regions and a plurality of wide regions.
REFERENCES:
patent: 5360984 (1994-11-01), Kirihata
patent: 6051850 (2000-04-01), Park
patent: 6180966 (2001-01-01), Kohno et al.
patent: 6404037 (2002-06-01), Finney
patent: 7432135 (2008-10-01), Takahashi
patent: 7456484 (2008-11-01), Ozeki et al.
patent: 7692214 (2010-04-01), Tokura et al.
patent: 7851866 (2010-12-01), Sakurai et al.
patent: 2005/0017290 (2005-01-01), Takahashi et al.
patent: 2006/0065923 (2006-03-01), Pfirsch
patent: 2007/0080407 (2007-04-01), Kono
patent: 2007/0215938 (2007-09-01), Yanagida et al.
patent: 2008/0048295 (2008-02-01), Takahashi
patent: 2009/0001411 (2009-01-01), Tokura et al.
patent: 2009/0057832 (2009-03-01), Kouno
patent: 2009/0173995 (2009-07-01), Takahashi
patent: 2010/0308370 (2010-12-01), Hshieh
patent: A-2005-183547 (2005-07-01), None
patent: A-2008-72848 (2008-03-01), None
patent: A-2008-283112 (2008-11-01), None
Office Action mailed Jan. 18, 2011 issued in JP patent application No. 2009-259135 (English translation enclosed).
Kouno Kenji
Tanabe Hiromitsu
Tsuzuki Yukio
DENSO CORPORATION
Jahan Bilkis
Louie Wai Sing
Posz Law Group , PLC
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