Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-09
2006-05-09
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S344000, C257S402000
Reexamination Certificate
active
07042051
ABSTRACT:
Provided is a manufacturing method of a semiconductor device which comprises forming, all over the surface of a substrate below the channel region of a MISFET, a p type impurity layer having a first peak in impurity concentration distribution and another p type impurity layer having a second peak in impurity concentration distribution, each layer having a function of preventing punch-through. Compared with a device having a punch through stopper layer of a pocket structure, the device of the present invention is suppressed in fluctuations in the threshold voltage. Moreover, with a relative increase in the controllable width of a depletion layer, a sub-threshold swing becomes small, thereby making it possible to prevent lowering of the threshold voltage and to improve a switching rate of the MISFET.
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Ohnishi Kazuhiro
Onai Takahiro
Ootsuka Fumio
Wakahara Shoji
Antonelli, Terry Stout and Kraus, LLP.
Pizarro Marcos D.
Renesas Technology Corp.
Weiss Howard
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