Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2011-04-12
2011-04-12
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S344000, C257S369000, C257S371000, C257S408000, C257S409000
Reexamination Certificate
active
07923805
ABSTRACT:
Methods and devices for forming both high-voltage and low-voltage transistors on a common substrate using a reduced number of processing steps are disclosed. An exemplary method includes forming at least a first high-voltage transistor well and a first low-voltage transistor well on a common substrate separated by an isolation structure extending a first depth into the substrate, using a first mask and first implantation process to simultaneously implant a doping material of a first conductivity type into a channel region of the low-voltage transistor well and a drain region for the high-voltage transistor well.
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Chinese Office Action 200610171225.9 dated May 8, 2009.
Chang ChanSam
Maeda Shigenobu
Oh Chang-Bong
Shin Heon-jong
Jahan Bilkis
Louie Wai-Sing
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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