Semiconductor device including groove width variation...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

Reexamination Certificate

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Details

C257S418000, C257S419000, C257S619000, C257SE29324, C073S514340

Reexamination Certificate

active

07956430

ABSTRACT:
An accelerator sensor includes a semiconductor substrate having a main front surface and a main rear surface, a first groove portion being formed along a front surface pattern, in the main front surface, a second groove portion being formed along a rear surface pattern, in the main rear surface, a through-hole being formed because of connection between at least parts of the first groove portion and the second groove portion and at least one groove width variation portion being formed in at least one of inner walls of the first groove portion. An offset of the rear surface pattern to the front surface pattern can be inspected easily by existence of the groove width variation portion.

REFERENCES:
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patent: 5567880 (1996-10-01), Yokota et al.
patent: 6369931 (2002-04-01), Funk et al.
patent: 6774445 (2004-08-01), Mutoh et al.
patent: 7078778 (2006-07-01), Schenk
patent: 7608900 (2009-10-01), Tasaki
patent: 2005/0274191 (2005-12-01), Hasegawa et al.
patent: 2007/0215966 (2007-09-01), Ikegami
patent: 2007/0261490 (2007-11-01), Kai

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