Semiconductor device including gate stack formed on inclined...

Details Semiconductor device including gate stack formed on inclined... Semiconductor device including gate stack formed on inclined...

2006-11-17

2010-02-23

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With specified crystal plane or axis

C257S628000, C257S409000, C257SE29004, C257SE29136, C257SE29201

Reexamination Certificate

active

07667300

ABSTRACT:
A semiconductor device includes a transistor. The transistor includes a substrate having an inclined surface, a first upper surface extending from a lower portion of the inclined surface, and a second upper surface extending from an upper end of the inclined surface. A gate stack structure is formed on the inclined surface and includes a gate electrode. A first impurity region formed on one of the first and second upper surfaces contacts the gate stack structure. A second impurity region formed on the second upper surface contacts the gate stack structure. A channel between the first and second impurity regions is formed along the inclined surface in a crystalline direction.

REFERENCES:
patent: 6670694 (2003-12-01), Momose
patent: 2006/0049430 (2006-03-01), Kasai et al.
M. Yang et al. “High Performance CMOS Fabricated o Hybrid Substrate With Different Crystal Orientations”. 2003.

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