Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-12
2011-04-12
Landau, Matthew C (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S410000, C257S411000, C257SE29132, C257SE21639, C438S216000, C438S287000, C438S585000, C977S773000, C977S776000, C977S778000, C977S779000, C977S785000
Reexamination Certificate
active
07923761
ABSTRACT:
A semiconductor device includes a gate insulation film that is formed of pyroceramics including an amorphous matrix layer, which is provided on a major surface of a silicon substrate, and crystalline phases lines with a high dielectric constant, which are dispersed in the amorphous matrix layer. The semiconductor device further includes a gate electrode that is provided on the gate insulation film.
REFERENCES:
patent: 3912527 (1975-10-01), Utsumi et al.
patent: 5262595 (1993-11-01), Yano et al.
patent: 5804473 (1998-09-01), Takizawa
patent: 6297095 (2001-10-01), Muralidhar et al.
patent: 6734069 (2004-05-01), Eriguchi
patent: 6737689 (2004-05-01), Schlosser et al.
patent: 6737716 (2004-05-01), Matsuo et al.
patent: 7051945 (2006-05-01), Empedocles et al.
patent: 7068898 (2006-06-01), Buretea et al.
patent: 7186570 (2007-03-01), Kijima et al.
patent: 7309830 (2007-12-01), Zhang et al.
patent: 7420840 (2008-09-01), Jin
patent: 7453108 (2008-11-01), Jin
patent: 2002/0000593 (2002-01-01), Nishiyama et al.
patent: 2003/0092238 (2003-05-01), Eriguchi
patent: 2003/0132432 (2003-07-01), Yoshii et al.
patent: 2004/0106285 (2004-06-01), Zacharias
patent: 2004/0108512 (2004-06-01), Iwata et al.
patent: 2004/0115883 (2004-06-01), Iwata et al.
patent: 2004/0183647 (2004-09-01), Arai et al.
patent: 2005/0072989 (2005-04-01), Bawendi et al.
patent: 2005/0122775 (2005-06-01), Koyanagi et al.
patent: 2005/0151127 (2005-07-01), Iwata et al.
patent: 2005/0153493 (2005-07-01), Lee
patent: 2005/0239003 (2005-10-01), Chiodini et al.
patent: 2005/0280067 (2005-12-01), Ahn et al.
patent: 2006/0001069 (2006-01-01), Tomonaga et al.
patent: 2006/0054937 (2006-03-01), Lucovsky et al.
patent: 2006/0057794 (2006-03-01), Youn et al.
patent: 2006/0145136 (2006-07-01), Verhoeven
patent: 2006/0154432 (2006-07-01), Arai et al.
patent: 2006/0157741 (2006-07-01), Jin
patent: 2006/0211267 (2006-09-01), Joshi et al.
patent: 2007/0045623 (2007-03-01), Jin
patent: 2007/0262391 (2007-11-01), Jin
patent: 2007/0296032 (2007-12-01), Stumbo et al.
patent: 2008/0283903 (2008-11-01), Grabowski et al.
patent: 2008/0315316 (2008-12-01), Jin
patent: 2009/0115311 (2009-05-01), Joshi et al.
patent: 2010/0123197 (2010-05-01), Jin
patent: 2010/0148223 (2010-06-01), Jin
patent: 2010/0176457 (2010-07-01), Jin
patent: 58-093332 (1983-06-01), None
patent: 2002-016063 (2002-01-01), None
patent: 2002-314070 (2002-10-01), None
patent: 2002-314074 (2002-10-01), None
patent: WO03/072524 (2003-09-01), None
G.B. Alers et al., “Intermixing at the Tantalum Oxide/Silicon Interface in Gate Dielectric Structures,” Appl. Phys. Lett., vol. 73, No. 11, Sep. 14, 1998, pp. 1517-1519.
G.D. Wilk et al., “Electrical Properties of Hafnium Silicate Gate Dielectrics Deposits Directly on Silicon,” Appl. Phys. Lett., vol. 74, No. 19, May 10, 1999, pp. 2854-2856.
J.A. Gupta et al., “Gadolinium Silicate Gate Dielectric Films with Sub-1.5 nm Equivalent Oxide Thickness,” Appl. Phys. Lett., vol. 78, No. 12, Mar. 19, 2001, pp. 1718-1720.
Z. Yu et al., “Epitaxial Oxide Thin Films on Si(001),” J. Vac. Sci. Technol., vol. B18, No. 4, Jul./Aug. 2000, pp. 2139-2145.
Foley & Lardner LLP
Kabushiki Kaisha Toshiba
Landau Matthew C
Malek Maliheh
LandOfFree
Semiconductor device including gate insulation film that is... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device including gate insulation film that is..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including gate insulation film that is... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2660885