Semiconductor device including first and second transistor...

Details Semiconductor device including first and second transistor... Semiconductor device including first and second transistor...

2006-09-05

2006-09-05

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S365000, C257S371000

Reexamination Certificate

active

07102197

ABSTRACT:
A salicide block area is provided around a gate electrode. Polysilicon coupling portions are formed, which extend at plurality of points from the gate electrode to an area outside of an active region. A contact provided at this inactive region electrically connects the gate electrode to gate electrode metal wiring, which is provided above the gate electrode.

REFERENCES:
patent: 6157065 (2000-12-01), Huang et al.
patent: 6365941 (2002-04-01), Rhee
patent: 2005/0179057 (2005-08-01), Tago et al.
patent: 2001-189429 (2001-07-01), None

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