Semiconductor device including capacitorless RAM

Details Semiconductor device including capacitorless RAM Semiconductor device including capacitorless RAM

2011-04-12

2011-04-12

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29166, C365S185100, C365S185010

Reexamination Certificate

active

07923766

ABSTRACT:
There is provided a semiconductor device including a capacitorless RAM. The semiconductor device includes a field effect transistor (FET) having a floating body structure. FET includes a channel body region arranged in a first region comprising a first semiconductor (e.g., p-SiGe) having a given band gap and a second region comprising a second semiconductor (e.g., n-Si) having a larger band gap than the first semiconductor.

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