Semiconductor device including bipolar junction transistor...

Details Semiconductor device including bipolar junction transistor... Semiconductor device including bipolar junction transistor...

2005-03-08

2009-06-16

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S378000, C257SE27015

Reexamination Certificate

active

07547948

ABSTRACT:
A method of manufacturing a CMOS-BJT semiconductor device comprises the steps of: forming a collector region of a first conductivity type and a first well of the first conductivity type, simultaneously in a semiconductor substrate; forming a second well of a second conductivity type opposite to said first conductivity type, in the semiconductor substrate; forming a base region of the second conductivity type in the collector region; forming first and second insulated gate structure on said first and second wells, and a junction protection structure having same constituent elements as said insulated gate structures on said base region; and forming second source/drain regions of the first conductivity type in said second well, and an emitter region of the first conductivity type in the base region, simultaneously, with an emitter-base junction reaching the principal surface below said junction protection structure.

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patent: 2006/0223257 (2006-10-01), Williams et al.
patent: 62-086752 (1987-04-01), None
patent: 1998-074222 (1998-11-01), None
Hitosho Okamura, et al., “BiCMOS Embedded Gate Array QB-8E,” NEC, vol. 49, No. 3, 1996.

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