Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-04-12
2011-04-12
Blum, David S (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S528000, C257SE29001, C336S232000
Reexamination Certificate
active
07923814
ABSTRACT:
A semiconductor device includes an interlayer insulating film and an inductor. The inductor includes a first soft magnetic thin film pattern formed on the interlayer insulating film, the first soft magnetic film comprising a) at least one material selected from Fe, Co, Ni, or alloys thereof b) at least one element selected from Ti, Hf, or B, and c) N, a metal film pattern formed on the first soft magnetic thin film pattern and a second soft magnetic thin film pattern formed on the metal film pattern, the second soft magnetic thin film pattern comprising a) at least one material selected from Fe, Co, Ni, or alloys thereof; b) at least one element selected from Ti, Hf, or B; and c) N. Edges of the first soft magnetic thin film pattern, edges of the metal film pattern and edges of the second soft magnetic thin film pattern are vertically aligned.
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Chung Chul-ho
Jeong Joo-hyun
Blum David S
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
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