Semiconductor device including an improved trench arrangement

Details Semiconductor device including an improved trench arrangement Semiconductor device including an improved trench arrangement

1988-12-20

1991-09-03

James, Andrew J.

357 43, 357 47, 357 50, 357 54, H01L 2968

Patent

active

050459040

ABSTRACT:
A small and reliable semiconductor device is provided in a substrate which has an isolation trench and a capacitor trench. The isolation trench isolates a bipolar transistor from other semiconductor devices, and the capacitor trench provides capacitance to a memory cell which is formed in the substrate. The interior of the device isolation trench is kept in a floating state with respect to the surrounding semiconductor regions by forming an insulating film over the inner surface of the trench. In the capacitor trench, insulating layers and resilient conductive layers are formed alternately to form capacitance between the opposing conductive layers.

REFERENCES:
patent: 4689656 (1987-08-01), Silvestri et al.
patent: 4799099 (1989-01-01), Verret et al.
patent: 4873560 (1989-10-01), Sunami et al.
patent: 4918502 (1990-04-01), Kaga et al.

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