Semiconductor device including an element isolating film having

Details Semiconductor device including an element isolating film having Semiconductor device including an element isolating film having

1996-03-28

1998-12-01

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257340, 257343, 257344, 438265, 438303, H01G 2976, H01G 2994, H01G 31062, H01G 31113

Patent

active

058442740

ABSTRACT:
A semiconductor device and a method of manufacturing the same provide a structure which can be easily integrated to a higher extent without providing an alignment margin taking an alignment accuracy of photolithography into consideration. In the semiconductor device, a gate electrode and a pair of source/drain electrodes are formed inside a transistor opening formed at first and second insulating films forming a flat element isolating film. Thereby, an end of the gate electrode in the width direction is defined in an aligned manner by the transistor opening in the step of forming the gate electrode so that it is not necessary to provide the alignment margin taking the alignment accuracy into consideration. This allows high integration.

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