Semiconductor device including an anode layer having low density

Details Semiconductor device including an anode layer having low density Semiconductor device including an anode layer having low density

1994-02-24

1995-07-11

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Tunneling pn junction device

257577, 257653, H01L 29861, H01L 29885

Patent

active

054323606

ABSTRACT:
A semiconductor diode characterized by an anode electrode structure connected to a double diffusion of P-type impurities in a major surface of an N.sup.- semiconductor. The first diffusion forming a first plurality of P.sup.- well regions and the second diffusion selectively forming a second plurality of P.sup.+ well regions within the first well region.

REFERENCES:
patent: 4017882 (1977-04-01), Kannam et al.

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